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| ADVANCED INFORMATION ADVANCED INFORMATION MMBT4401 SMALL SIGNAL TRANSISTORS (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View As complementary type, the PNP transistor MMBT4403 is recommended. This transistor is also available in the TO-92 case with the type designation 2N4401. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2X .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation FR-5 Board,* TA=25C Derate above 25C Power Dissipation Alumina Substrate,** TA=25C Derate above 25C Thermal Resistance, Junction to Ambient FR-5 Board Alumina Substrate VCBO VCEO VEBO IC Ptot 60 40 6.0 600 225 1.8 300 2.4 556 417 150 55 to +150 Volts Volts Volts mA mW mW/C mW mW/C C/W C C Ptot RQJA Tj TS Junction Temperature Storage Temperature Range *FR-5 = 1.0 x 0.75 x 0.062 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2/18/99 MMBT4401 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 0.1 mA, IE = 0 Collector-Emitter Breakdown Voltage(1) at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 0.1 mA, IC = 0 Collector-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base-Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Collector Cutoff Current at VEB = 0.4 V, VCE = 35 V Base Cutoff Current at VEB = 0.4 V, VCE = 35 V DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 2 V, IC = 0.1 mA 1 mA 10 mA 150 mA(1) 500 mA(1) V(BR)CBO V(BR)CEO V(BR)EBO 60 40 6.0 Volts Volts Volts VCEsat VCEsat VBEsat VBEsat ICEX IBEV 0.75 0.40 0.75 0.95 1.20 100 100 Volts Volts Volts Volts nA nA hFE hFE hFE hFE hFE hie hre fT CCBO CEBO 20 40 80 100 40 1 0.1 10-4 250 300 15 8 10-4 6.5 30 kW MHz pF pF Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Current Gain-Bandwidth Product at VCE = 10 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V,f = 1 MHz, IE=0 Emitter-Base Capacitance at VEB = 0.5 V,f = 1 MHz, IC=0 NOTES: (1) Pulse test: pulse width 300ms, cycle 2.0% MMBT4401 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 10 V, IC = 1 mA, f = 1 kHz Delay Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA VCC = 30 V, VBE = 40 V Rise Time (see Fig. 1) at IB1 = 15 mA, IC = 150 mA VCC = 30 V, VBE = 40 V Storage Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA VCC = 30 V, IC = 150 mA Fall Time (see Fig. 2) at IB1 = IB2 = 15 mA, IC = 150 mA VCC = 30 V, IC = 150 mA hfe hoe 40 1.0 500 30 mS ns td 15 tr 20 ns ts 225 ns tf 30 ns SWITCHING TIME EQUIVALENT TEST CIRCUIT FIGURE 1 - TURN-ON TIME FIGURE 2 - TURN-OFF TIME 1.0 to 100 ms, DUTY CYCLE A 2% +16 V 0 -2 V < 2 ns 1kW +30V 200W +16 V 0 C S* < 10 pF Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope -14 V 1.0 to 100 ms, DUTY CYCLE A 2% +30V 200W 1kW < 20 ns -4 V C S* < 10 pF |
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